Heavily Doped n++ GaN Cap Layer AlN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor (2021)

First Author: Karami K.
Attributed to:  Novel GaN Power Devices and Packaging Technologies for 300 degC Ambient Operation funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Type: Journal Article/Review

Volume: 14

Parent Publication: INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS

ISSN: 1985-5761