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The Role of Selective Pattern Etching to Improve the Ohmic Contact Resistance and Device Performance of AlGaN/GaN HEMTs (2021)

First Author: Dhongde A.

Attributed to: Novel GaN Power Devices and Packaging Technologies for 300 degC Ambient Operation funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Type: Journal Article/Review

Volume: 14

Parent Publication: INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS

ISSN: 1985-5761