📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi 2 O 2 Se (2018)

First Author: Chen C

Attributed to: Oxford Quantum Materials Platform Grant funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1126/sciadv.aat8355

PubMed Identifier: 30225369

Publication URI: http://europepmc.org/abstract/MED/30225369

Type: Journal Article/Review

Parent Publication: Science Advances

Issue: 9

ISSN: 2375-2548