📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide. (2023)

First Author: Chen C

Attributed to: Sir Henry Royce Institute - Cambridge Equipment funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.ultramic.2023.113833

PubMed Identifier: 37666104

Publication URI: http://europepmc.org/abstract/MED/37666104

Type: Journal Article/Review

Volume: 254

Parent Publication: Ultramicroscopy

ISSN: 0304-3991