Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide (2023)

First Author: Chen C
Attributed to:  Sir Henry Royce Institute - Cambridge Equipment funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.ultramic.2023.113833

Publication URI: http://dx.doi.org/10.1016/j.ultramic.2023.113833

Type: Journal Article/Review

Parent Publication: Ultramicroscopy