Hydrogen-Terminated Diamond Field-Effect Transistors With Cutoff Frequency of 53 GHz (2012)
Attributed to:
Ultra short gate length diamond FETs for high power/high frequency applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2012.2210020
Publication URI: http://dx.doi.org/10.1109/led.2012.2210020
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 10