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Two methods of realising 10 nm T-gate lithography (2009)

First Author: Bentley S

Attributed to: Ultra short gate length diamond FETs for high power/high frequency applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2008.12.029

Publication URI: http://dx.doi.org/10.1016/j.mee.2008.12.029

Type: Journal Article/Review

Parent Publication: Microelectronic Engineering

Issue: 4-6