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Investigating the properties of interfacial layers in planar Schottky contacts on hydrogen-terminated diamond through direct current/small-signal characterization and radial line small-signal modelling (2015)

First Author: Cappelluti F

Attributed to: Ultra short gate length diamond FETs for high power/high frequency applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4915297

Publication URI: http://dx.doi.org/10.1063/1.4915297

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 10