RF Operation of Hydrogen-Terminated Diamond Field Effect Transistors: A Comparative Study (2015)

First Author: Russell S
Attributed to:  Ultra short gate length diamond FETs for high power/high frequency applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2015.2392798

Publication URI: http://dx.doi.org/10.1109/ted.2015.2392798

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 3