The optimisation, fabrication and comparison of 10 kV-rated 4H-SiC IGBTs and MOSFETs (2023)

First Author: Renz A
Attributed to:  Underpinning Power Electronics switch optimisation Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ecce53617.2023.10362455

Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85182941205

Type: Conference/Paper/Proceeding/Abstract