Improved performance of InSe field-effect transistors by channel encapsulation (2018)

First Author: Liang G
Attributed to:  Two dimensional III-VI semiconductors and graphene-hybrid heterostructures funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6641/aab62b

Publication URI: http://dx.doi.org/10.1088/1361-6641/aab62b

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 6