📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication. (2024)

First Author: Stock TJZ

Attributed to: Room-Temperature Single Atom Silicon Quantum Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/adma.202312282

PubMed Identifier: 38380859

Publication URI: http://europepmc.org/abstract/MED/38380859

Type: Journal Article/Review

Volume: 36

Parent Publication: Advanced materials (Deerfield Beach, Fla.)

Issue: 24

ISSN: 0935-9648