Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication (2024)

First Author: Stock T
Attributed to:  Room-Temperature Single Atom Silicon Quantum Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/adma.202312282

Publication URI: http://dx.doi.org/10.1002/adma.202312282

Type: Journal Article/Review

Parent Publication: Advanced Materials