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Optimizing a-IGZO Source-Gated Transistor Current by Structure Alteration via TCAD Simulation and Experiment (2024)

First Author: Sihapitak P

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2024.3360019

Publication URI: http://dx.doi.org/10.1109/ted.2024.3360019

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 4