Accurate Statistical Description of Random Dopant-Induced Threshold Voltage Variability (2008)
Attributed to:
Meeting the design challenges of the nano-CMOS electronics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2008.2001030
Publication URI: http://dx.doi.org/10.1109/led.2008.2001030
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 8
ISSN: 07413106