Time domain simulation of statistical variability and oxide degradation including trapping/detrapping dynamics (2012)
Attributed to:
Molecular-Metal-Oxide-nanoelectronicS (M-MOS): Achieving the Molecular Limit
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Type: Other
Parent Publication: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD