Misinterpretation of drain transient spectroscopy in GaN HEMTs: Explanation using a floating buffer model (2019)
Attributed to:
High Performance Buffers for RF GaN Electronics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Type: Other
Parent Publication: CS MANTECH 2019 - 2019 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers