30 µ m thick GaAs X-ray p + -i-n + photodiode grown by MBE (2019)
Abstract
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Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.nima.2019.162670
Publication URI: http://dx.doi.org/10.1016/j.nima.2019.162670
Type: Journal Article/Review
Parent Publication: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
ISSN: 01689002