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Characterization of BTI in SiC MOSFETs Using Third Quadrant Characteristics (2019)

First Author: Gonzalez J

Attributed to: High Current Module and Technologies Optimised for HVDC funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ispsd.2019.8757624

Publication URI: http://dx.doi.org/10.1109/ispsd.2019.8757624

Type: Conference/Paper/Proceeding/Abstract

ISSN: 10636854