📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

InGaAs/AlAs Resonant Tunneling Diodes with Very High Negative Differential Conductance for Efficient and Cost-Effective mm-Wave/THz Sources (2019)

First Author: Muttlak S
Attributed to:  Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ucmmt47867.2019.9008338

Publication URI: http://dx.doi.org/10.1109/ucmmt47867.2019.9008338

Type: Conference/Paper/Proceeding/Abstract