Current collapse and kink effect in GaN RF HEMTs: the key role of the epitaxial buffer (2020)

First Author: Uren M
Attributed to:  Sub-micron 3-D Electric Field Mapping in GaN Electronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/bcicts48439.2020.9392966

Publication URI: http://dx.doi.org/10.1109/bcicts48439.2020.9392966

Type: Conference/Paper/Proceeding/Abstract