Strong in-plane anisotropy in the electronic properties of doped transition metal dichalcogenides exhibited in W 1 - x Nb x S 2 (2021)

First Author: Loh S

Attributed to: Support for the UKCP consortium funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.103.245410

Publication URI: http://dx.doi.org/10.1103/physrevb.103.245410

Type: Journal Article/Review

Parent Publication: Physical Review B

Issue: 24

ISSN: 24699969 24699950