Modelling of the Gate Capacitance in the Double Nanowire based Field-Effect Transistors (2021)
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/fleps51544.2021.9469836
Publication URI: http://dx.doi.org/10.1109/fleps51544.2021.9469836
Type: Conference/Paper/Proceeding/Abstract