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Role of Defects and Power Dissipation on Ferroelectric Memristive Switching (2022)

First Author: Roy P

Attributed to: ECCS - EPSRC Development of uniform, low power, high density resistive memory by vertical interface and defect design funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/aelm.202101392

Publication URI: http://dx.doi.org/10.1002/aelm.202101392

Type: Journal Article/Review

Parent Publication: Advanced Electronic Materials

Issue: 6

ISSN: 2199160X