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Defect formation in InGaAs/AlSb/InAs memory devices (2023)

First Author: Trevisan A

Attributed to: Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1116/6.0002677

Publication URI: http://dx.doi.org/10.1116/6.0002677

Type: Journal Article/Review

Parent Publication: Journal of Vacuum Science & Technology B

Issue: 4

ISSN: 21662754 21662746