Characterization of the novel ICeGaN 650V/ 8.5 A, 200 mO power device technology (2023)

First Author: Mukherjee K
Attributed to:  Sir Henry Royce Institute - Cambridge Equipment funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.pedc.2023.100037

Publication URI: http://dx.doi.org/10.1016/j.pedc.2023.100037

Type: Journal Article/Review

Parent Publication: Power Electronic Devices and Components