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Recent progress in epitaxial growth of dislocation tolerant and dislocation free III-V lasers on silicon (2024)

First Author: Yan Z

Attributed to: Tunnel epitaxy: building a buffer-less III-V-on-insulator (XOI) platform for on-chip light sources funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/ad26cd

Publication URI: http://dx.doi.org/10.1088/1361-6463/ad26cd

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 21