Recent progress in epitaxial growth of dislocation tolerant and dislocation free III-V lasers on silicon (2024)
Attributed to:
Tunnel epitaxy: building a buffer-less III-V-on-insulator (XOI) platform for on-chip light sources
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/ad26cd
Publication URI: http://dx.doi.org/10.1088/1361-6463/ad26cd
Type: Journal Article/Review
Parent Publication: Journal of Physics D: Applied Physics
Issue: 21