Recent progress in epitaxial growth of dislocation tolerant and dislocation free III-V lasers on silicon (2024)

First Author: Yan Z
Attributed to:  C-band quantum-dot lasers on monolithically grown Si platform funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/ad26cd

Publication URI: http://dx.doi.org/10.1088/1361-6463/ad26cd

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 21