Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N (2015)

First Author: Kusch G

Attributed to: Advanced III-nitride materials for next generation UV emitters used in water purification, environmental protection and local network communication funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.14279/depositonce-9806

Publication URI: https://depositonce.tu-berlin.de/handle/11303/10913

Type: Other