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Asymmetry-induced resistive switching in Ag-Ag$_{2}$S-Ag memristors enabling a simplified atomic-scale memory design (2016)

First Author: Gubicza A

Attributed to: ULTRA-HIGH-RESOLUTION, ULTRA-SENSITIVE MULTIFUNCTIONAL BALLISTIC NANO SENSORS FOR THE SIMULTANEOUS DETECTION OF MAGNETIC, ELECTRIC AND OPTICAL FIELDS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.1604.04168

Publication URI: https://arxiv.org/abs/1604.04168

Type: Other