Asymmetry-induced resistive switching in Ag-Ag$_{2}$S-Ag memristors enabling a simplified atomic-scale memory design (2016)

First Author: Gubicza A
Attributed to:  Transition-edge sensors: achieving true potential funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.1604.04168

Publication URI: https://arxiv.org/abs/1604.04168

Type: Other