Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design (2016)

First Author: Gubicza, Agnes
Attributed to:  Transition-edge sensors: achieving true potential funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.3929/ethz-b-000581366

Publication URI: http://hdl.handle.net/20.500.11850/581366

Type: Other