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Weak localization and weak antilocalization in doped germanium epilayers (2017)

First Author: Newton P

Attributed to: Spintronic device physics in Si/Ge Heterostructures. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.7890

Publication URI: https://www.repository.cam.ac.uk/handle/1810/262623

Type: Journal Article/Review