Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping (2017)
Attributed to:
Mechanisms and Control of Resistive Switching in Dielectrics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.21779
Publication URI: https://www.repository.cam.ac.uk/handle/1810/274645
Type: Journal Article/Review