Towards Substrate Engineering of Graphene-Silicon Schottky Diode Photodetectors (2017)
Attributed to:
Instrument to identify defects and impurities in wide band gap semiconductors via excited states
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.1706.09042
Publication URI: https://arxiv.org/abs/1706.09042
Type: Other