Excited states of defect lines in silicon: A first-principles study based on hydrogen cluster analogues (2017)
Attributed to:
Atomically Deterministic Doping and Readout For Semiconductor Solotronics (ADDRFSS)
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.1710.02006
Publication URI: https://arxiv.org/abs/1710.02006
Type: Other