Band edge states, intrinsic defects, and dopants in monolayer HfS2 and SnS2 (2018)

First Author: Lu H
Attributed to:  Integration of Novel Materials in Spintronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.23606

Publication URI: https://www.repository.cam.ac.uk/handle/1810/276318

Type: Journal Article/Review