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Band gap measurements of monolayer h-BN and insights into carbon-related point defects (2021)

First Author: Román R

Attributed to: Strain-engineered graphene: growth, modification and electronic properties funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.2107.07950

Publication URI: https://arxiv.org/abs/2107.07950

Type: Other