Role of ALD Al2O3 surface passivation on the performance of p-type Cu2O thin film transistors (2020)
Attributed to:
Precision Manufacturing of Flexible CMOS
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.2010.10928
Publication URI: https://arxiv.org/abs/2010.10928
Type: Preprint