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Disorder-induced electron and hole trapping in amorphous TiO2 (2020)

First Author: Mora-Fonz D

Attributed to: Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.2007.09165

Publication URI: https://arxiv.org/abs/2007.09165

Type: Other