Multilevel Resistance Switching and Enhanced Spin Transition Temperature in Single Molecule Spin Crossover Nanogap Devices (2020)

First Author: Gee A
Attributed to:  Spintronics at Leeds funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.2001.06879

Publication URI: https://arxiv.org/abs/2001.06879

Type: Other