Multilevel Resistance Switching and Enhanced Spin Transition Temperature in Single Molecule Spin Crossover Nanogap Devices (2020)
Attributed to:
Spintronics at Leeds
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.2001.06879
Publication URI: https://arxiv.org/abs/2001.06879
Type: Other