Quantifying Temperature-dependent Substrate Loss in GaN-on-Si RF Technology (2019)

First Author: Chandrasekar H

Attributed to: Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.1901.09521

Publication URI: https://arxiv.org/abs/1901.09521

Type: Other