Quantifying Temperature-dependent Substrate Loss in GaN-on-Si RF Technology (2019)
Attributed to:
Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.48550/arxiv.1901.09521
Publication URI: https://arxiv.org/abs/1901.09521
Type: Other