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Engineering of Grain Boundaries in CeO2 Enabling Tailorable Resistive Switching Properties (2023)

First Author: Dou H

Attributed to: ECCS - EPSRC Development of uniform, low power, high density resistive memory by vertical interface and defect design funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.94727

Publication URI: https://www.repository.cam.ac.uk/handle/1810/347312

Type: Journal Article/Review