Computational study of transition metal dichalcogenide cold source MOSFETs with sub-60 mV per decade and negative differential resistance effect (2022)

First Author: Yin Y
Attributed to:  Integration of Novel Materials in Spintronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.87724

Publication URI: https://www.repository.cam.ac.uk/handle/1810/340298

Type: Journal Article/Review