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Reduced Fermi Level Pinning at Physisorptive Sites of Moire-MoS2/Metal Schottky Barriers. (2022)

First Author: Zhang Z

Attributed to: Integration of Novel Materials in Spintronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.82103

Publication URI: https://www.repository.cam.ac.uk/handle/1810/334685

Type: Journal Article/Review