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Influence of Al x Ga1-x N nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001) (2022)

First Author: Gundimeda A

Attributed to: Fundamental studies of zincblende nitride structures for optoelectronic applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.80977

Publication URI: https://www.repository.cam.ac.uk/handle/1810/333557

Type: Journal Article/Review