Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced. (2021)

First Author: O'Hanlon T

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.17863/cam.65868

Publication URI: https://www.repository.cam.ac.uk/handle/1810/318750

Type: Journal Article/Review