Point Defects in InGaN/GaN Core-Shell Nanorods: Role of the Regrowth Interface (2021)
Attributed to:
Manufacturing of nano-engineered III-nitride semiconductors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.65606
Publication URI: https://www.repository.cam.ac.uk/handle/1810/318492
Type: Other