Carbon cluster formation and mobility degradation in 4H-SiC MOSFETs (2021)
Attributed to:
Integration of Novel Materials in Spintronic Devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.64307
Publication URI: https://www.repository.cam.ac.uk/handle/1810/317195
Type: Journal Article/Review