Robust In-Zn-O Thin-Film Transistors with a Bilayer Heterostructure Design and a Low-Temperature Fabrication Process Using Vacuum and Solution Deposited Layers. (2020)
Attributed to:
Smart Flexible Quantum Dot Lighting
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.55708
Publication URI: https://www.repository.cam.ac.uk/handle/1810/308619
Type: Journal Article/Review