Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells (2020)
Attributed to:
Fundamental studies of zincblende nitride structures for optoelectronic applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.17863/cam.54871
Publication URI: https://www.repository.cam.ac.uk/handle/1810/307779
Type: Journal Article/Review